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savantic semiconductor product specification silicon pnp power transistors 2SA1062 d escription with to-3pn package complement to type 2sc2486 high collector power dissipation applications high power audio frequency amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -7 a i cm collector current-peak -12 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1062 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -120 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.5a -2.0 v v be base-emitter on voltage i c =-5a;v ce =-5v -1.8 v i cbo collector cut-off current v cb =-120v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 40 200 h fe-3 dc current gain i c =-5a ; v ce =-5v 20 f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz h fe-2 classifications r q p 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1062 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)

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